CdTe and Related Compounds; Physics, Defects, Hetero- and by Edited By, Robert Triboulet and Paul Siffert (Eds.)

By Edited By, Robert Triboulet and Paul Siffert (Eds.)

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Extra resources for CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications. Physics, CdTe-based Nanostructures, CdTe-based Semimagnetic Semiconductors, Defects

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Carrier diffusion lengths and lifetimes By definition, the carrier diffusion length is the average distance traveled due to diffusion during the lifetime of the carrier. R. Becker diffusion. Nevertheless, in the case of extrinsic semiconductors, carrier diffusion is controlled by the minority carriers and the diffusion length L is given by L ¼ ðDtÞ1=2 ; ð13Þ where D and t are the diffusion constant and the lifetime, respectively. If D and t are known then L can be calculated. Experimentally L is determined from the decay of excess minority carriers which are generated locally by either a photon flux or an electron beam, or by a more complex photocurrent analysis.

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