German Personnel Cars in Wartime by Reinhard Frank

By Reinhard Frank

Книга German body of workers autos in Wartime German team of workers vehicles in Wartime Книги Вооружение Автор: Reinhard Frank Год издания: 1989 Формат: pdf Издат.:Schiffer Publishing Страниц: fifty six Размер: 16.62 ISBN: 0887401627 Язык: Английский0 (голосов: zero) Оценка:Covers the differing kinds of vans and automobiles utilized by Germany in WWII. B/w pictures, line drawings.

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E. C. Tofield, J. Chem. Soc, Faraday Trans. 1, 84, 441 (1988). D. T. Chung, Sensors and Actuators, 20, 301 (1989). Y. Shimizu, Y. Takao and M. Egashira, J. Electrochem. Soc, 135, 2539 (1988). Y. Okayama, T. Nomura, H. Yajima and T. Ishii, Denki Kagaku, 54 777 (1986) (in Japanese). S. Matsushima, Y. Teraoka, N. Miura and N. Yamazoe, Jpn. J. Appl. , 27, 1798 (1988). M. Nitta, S. Kanefusa, S. Ohtani and M. Haradome, / . , 13 15 (1984). Y. Okayama, Technical Digest of the 6th Sensor Symposium, 1986, p.

7, was strongly dependent on the grain size of Sn0 2 included, decreasing sharply with increasing D up to ca. 10 nm then becoming almost independent of D above 15 nm. A similar trend is seen for S to 800 ppm CO. These data show the importance of controlling D at a size com­ parable with or less than 2L for high sensitivity. All investigations of Sn0 2 elements so far conducted have dealt with grain sizes (above 20 nm) far greater than 2L, failing to find such a striking dependence of S on D. 2 Grain Size Effects in Oxide-impregnated Sn0 2 Elements As mentioned before, grain size of Sn0 2 can be controlled by impregnation with metal oxides.

Silicon Epitaxy Epitaxy is a process where a thin crystalline layer is grown on top of a crystalline substrate. The substrate wafer acts as a seed crystal. For silicon epitaxy CVD processes are used. As silicon sources silane (SiH4), silicontetrachloride (SiCl4), dichlorosilane Target Voltage Argon dischage Wafer Electrodes Fig. 2 Schematic view of the sputter process. Basic Processing Steps 47 (SiH2Cl2) and trichlorosilane (S1HCI3) are used. Depending on the silicon source process temperatures vary between 900°C and 1250°C.

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